薄膜工艺研发工程师

1.Work with different teams to develop new best in class semiconductor devices;

2.Plan and execute effective experiments, write clear and detailed reports;

3.Make insightful inferences from substantial data, including material, defect and electrical data;

4.Support root cause finding and unique failure mode analysis;

5.Maintain or develop expertise in multiple process, hardware, or technology areas;

6.Cooperating with manufacturing fabto facilitate the successful transfer of new technology.

任职资格:

Qualifications:

1.Master degree in Physical Sciences, Optics, Electrical Engineering, Chemical Engineering, Materials Science, Mathematics etc.

2.Lower Rs Metal material study and process development experience;

3.At least 8 years semiconductor working experience;

4.Experience in advanced CMOS development, like HKMG, FINFET or GAA is preferred;Experience in advanced DRAM process( beyond 1a node )mass production or technology development is preferred;

Working Knowledge of DRAM/CMOS related electrical/reliability properties;

5.Good communication and teamwork experience;

6.Good at solving complex problems including experience leading cross-functional taskforces.

7.Fluent English speaking & writing skills

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